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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMT10V275/D Advance Information MMT10V275* MMT10V400* *Motorola preferred devices Thyristor Surge Suppressors High Voltage Bidirectional TVS Devices These transient voltage suppression (TVS) devices prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover-triggered crowbar protectors. Turn-off occurs when the surge current falls below the holding current value. Applications include current loop lines in telephony and control systems, central office stations, repeaters, building and residence entrance terminals and electronic telecom equipment. * High Surge Current Capability * Bidirectional Protection in a Single Device * Little Change of Voltage Limit with Transient Amplitude or Rate * Freedom from Wearout Mechanisms Present in Non-Semiconductor Devices * Fail-Safe. Shorts When Overstressed, Preventing Continued Unprotected Operation. BIDIRECTIONAL THYRISTOR SURGE SUPPRESSORS 25 WATTS STEADY STATE CASE 416A-01 DEVICE RATINGS: - 40C to 50C for MMT10V275 - 40C to 65C for MMT10V400 (except surge) Parameter Peak Repetitive Off-State Voltage -- Maximum MMT10V275 MMT10V400 On-State Surge Current -- Maximum Nonrepetitive (MMT10V400 - 20C to 65C) 10 x 1000 s exponential wave, Notes 1, 2, 3 60 Hz ac, 1000 V(rms), RS = 1.0 k, 1 second 60 Hz ac, 480 V(rms), RS = 48 , 2 seconds Rate of Change of On-State Current -- Maximum Nonrepetitive Critical Damped Wave, C = 1.2 F, L = 16 H, R = 7.4, VCI = 1000 V, I(pk) = 100 A (short circuit), 0 to 50% I (pk) ITSM1 ISTM2 ISTM3 di/dt Symbol VDM Value 200 265 100 10 1.0 50 A(pk) A(rms) A(rms) A/s Unit Volts DEVICE THERMAL RATINGS Operating Temperature Range Blocking or Conducting State Overload Junction Temperature -- Maximum Conducting State Only Thermal Resistance, Junction to Case -- Maximum Thermal Resistance, Case to Ambient, Without Heatsink TJ1 TJ2 RJC -- - 40 to + 125 + 175 1.5 + 200 C C C/W C/W This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data (c) Motorola, Inc. 1995 1 MMT10V275 MMT10V400 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristics Breakover Voltage (dv/dt = 100 V/s, ISC = 10 A, Vdc = 1000 V) Breakover Voltage (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 k, t = 0.5 cycle, Note 2) Breakover Voltage Temperature Coefficient Breakdown Voltage (I(BR) = 1.0 mA) Breakdown Voltage Temperature Coefficient Off State Current (VD = 160 V) On-State Voltage (IT = 10 A) (PW 300 s, Duty Cycle 2%, Note 2) Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 k) Holding Current Note 2 (10 x 100 Ms exponential wave, IT = 10 A, V = 52 V, RS = 200 ) Critical Rate of Rise of Off-State Voltage (Linear waveform, VD = 0.8 x Rated VDRM, TJ = 125C) Capacitance (f = 1.0 MHz, 50 V, 15 mV) 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. 3. Requires CS 6C/W each side, infinite heatsink. MMT10V275 MMT10V400 dV(BO)/dTJ ID VT IBO IH dv/dt CO MMT10V275 MMT10V400 V(BO)2 MMT10V275 MMT10V400 dV(BO)/dTJ V(BR) 200 265 -- -- -- -- -- 2000 -- -- -- 0.11 -- 3.0 500 400 -- 55 -- -- -- 3.0 4.0 -- -- -- -- %/C A Volts mA mA V/s pF -- -- -- -- -- 0.05 275 400 -- %/C Volts Symbol V(BO)1 -- -- -- -- 275 400 Volts Min Typ Max Unit Volts RS(A1) RC(S1) RJ(C1) TA TS1 TC1 RJ(C2) TJ PD RC(S2) RS(A2) TC2 TS2 TA Terms in the model signify: TA = Ambient Temp. TS = Heatsink Temp. TC = Case Temp. TJ = Junction Temp. RSA = Thermal Resistance, Heatsink to Ambient RCS = Thermal Resistance, Case to Heatsink RJC = Thermal Resistance, Junction to Case PD = Power Dissipation Subscripts 1 and 2 denote the device terminals, MT1 and MT2, respectively. Thermal resistance values are: RCS = 6C/W maximum (each side) RJC = 3C/W maximum (each side) The RCS values are estimates for dry mounting with heatsinks contacting the raised pedestal on the package. For minimum thermal resistance, the device should be sandwiched between clean, flat, smooth conducting electrodes and securely held in place with a compressive force of 2 pounds maximum. The electrodes should contact the entire pedestal area. When the device is mounted symmetrically, the thermal resistances are identical. The values for RSA and RCS are controlled by the user and depend on heatsink design and mounting conditions. Figure 1. Thermal Circuit, Device Mounted Between Heatsinks 2 Motorola Thyristor Device Data MMT10V275 MMT10V400 600 550 I H, HOLDING CURRENT (mA) 500 450 400 350 300 250 200 0 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (C) 70 80 I H , HOLDING CURRENT TEMPERATURE COEFFICIENT (mA/ C) 0 -1 TYPICAL -2 -3 TYPICAL LOW -4 200 250 300 350 400 450 500 IH, HOLDING CURRENT AT 0C (mA) 550 600 Figure 2. Typical Holding Current Figure 3. Holding Current Temperature Coefficient I BO, NORMALIZED BREAKOVER CURRENT 1.2 NORMALIZED BREAKOVER VOLTAGE 1.15 1.1 1.05 1 0.95 0.9 - 20 NORMALIZED TO 25C The thermal coefficient of VF(BR) is similar to that of a zener diode. I BO falls with temperature, reducing the zener impedance contribution to V BO. This causes the V BO temperature coefficient perature to be less than or equal to the VF(BR) coefficient. The graph allows the estimation of the maximum voltage rise of either parameter. 10 Note: The behavior of the breakover current during AC operation is complex, due to junction heating, case heating and thermal interaction between the device halves. Microplasma conduction at the beginning of breakdown sometimes results in higher local current densities and earlier than predicted switching. This reduces power dissipation and stress on the device. 1 MAXIMUM IBO = 1.0 A at 25C 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140 0.1 - 40 FIRST HALF-CYCLE f = 60 Hz VOC = 1000 V (rms) IOC = 1.0 A (rms) MINIMUM IBO UNIT - 20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE PRIOR TO TEST (C) 160 Figure 4. Normalized Maximum 60 Hz VBO versus Junction Temperature Figure 5. Temperature Dependence of 60 Hz Breakover Current Motorola Thyristor Device Data 3 MMT10V275 MMT10V400 PACKAGE DIMENSIONS 0.0127 (0.0005) T C -T- M NOTE 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION M AND P MAXIMUM MISALIGNMENT OF HALFS. INCHES MIN MAX 0.110 0.120 0.110 0.120 0.072 0.080 0.006 0.010 --- 4_ 0.073 0.077 --- 0.130 0.065 0.070 MILLIMETERS MIN MAX 2.79 3.05 2.79 3.05 1.83 2.03 0.15 0.25 --- 4_ 1.85 1.96 --- 3.30 1.65 1.78 A B NR P NOTE 3 E R N DIM A B C E M N P R CASE 416A-01 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 *MMT10V275/D* Motorola Thyristor Device Data MMT10V275/D |
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